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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDY55 DESCRIPTION With TO-3 package High current capability Fast switching speed APPLICATIONS LF large signal power amplification. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg Collector-base voltage PARAMETER CONDITIONS Open emitter Open base Collector-emitter voltage INCH Base current Emitter-base voltage Collector current GE S AN Open collector EMIC DUC ON VALUE 100 60 7 15 7 TOR UNIT V V V A A W ae ae Total power dissipation Junction temperature Storage temperature TC=25ae 117 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.5 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDY55 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 60 V VCEsat-1 VCEsat-2 Collector-emitter saturation voltage IC=4A ;IB=0.4A IC=10A ;IB=3.3A 1.1 V Collector-emitter saturation voltage 2.5 V VBE Base-emitter on voltage IC=4 A; VCE=4V VCE=100V; VBE=-1.5V TC=150ae VCE=30V; IB=0 1.8 5.0 30 0.7 V ICEX Collector cut-off current mA ICEO Collector cut-off current mA IEBO Emitter cut-off current hFE-1 hFE-2 DC current gain VEB=7V; IC=0 IC=4A ; VCE=4V DC current gain fT Transition frequency HAN INC SEM GE IC=10A ; VCE=4V OND IC 20 10 TOR UC 70 5.0 mA IC=1A ; VCE=4V;f=10MHz 10 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDY55 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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